標題: LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDE
作者: YEH, CF
CHEN, CL
YANG, YC
LIN, SS
YANG, TZ
HONG, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: LIQUID-PHASE DEPOSITION;POLY-SI TFT;LCD;LOW-TEMPERATURE PROCESS;LPCVD;FTIR;FIELD-EFFECT MOBILITY
公開日期: 1-四月-1994
摘要: Poly-Si thin-film transistor (TFT) devices using solid-phase-crystallized and liquid-phase-deposited gate oxide are, for the first time, realized by low-temperature processes (LTP) (<625-degrees-C) for future LCDs and 3-D integrated circuits. The method of liquid-phase deposition of SiO2 (LPD-SiO2) is described. The physical, chemical and electrical properties of the new dielectric layer are clarified. The TFT (W/L = 200 mum/10 mum) having an on-off current ratio of 10(6) at V(D) = 5 V, a field-effect mobility of 15 cm2/V.s at V(D) = 0.1 V, a threshold voltage of 5.6 V, and a subthreshold swing of 1.6 V/decade, exhibits sufficient performance for pixel transistors. The field-effect mobility is strongly dependent on channel length. Effective passivation of defects by plasma hydrogenation will be very essential to achieve higher performance.
URI: http://dx.doi.org/10.1143/JJAP.33.1798
http://hdl.handle.net/11536/2565
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.1798
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 4A
起始頁: 1798
結束頁: 1802
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NR95600016.pdf