標題: Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
作者: Lai, F
Chang, YH
Hsueh, TH
Huang, HW
Laih, LH
Kuo, HC
Wang, SC
Guung, TC
光電工程學系
Department of Photonics
關鍵字: VCSEL;proton implant;indium-tin-oxide;kink;high-speed operation
公開日期: 15-十一月-2004
摘要: We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L-I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2004.07.091
http://hdl.handle.net/11536/25645
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2004.07.091
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 113
Issue: 3
起始頁: 203
結束頁: 206
顯示於類別:期刊論文


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