標題: Interfacial microstructure and electrical properties of PT/Al2O3/Si annealed at high temperatures
作者: Chen, SY
Hsiao, CS
Hsu, JJ
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: PbTiO3/Al2O3/Si;ferroelectric;interfacial microstructure;memory properties
公開日期: 15-十一月-2004
摘要: Pb1+xTiO3 (PT) thin films were deposited on Al2O3(10 nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600 degreesC and excellent memory properties are obtained. However, with increasing annealing temperature above 700 degreesC, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al2O3/Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al2O3/Si. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2004.05.166
http://hdl.handle.net/11536/25644
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2004.05.166
期刊: APPLIED SURFACE SCIENCE
Volume: 238
Issue: 1-4
起始頁: 429
結束頁: 432
顯示於類別:會議論文


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  1. 000224655200081.pdf