標題: Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films
作者: Li, ZQ
Lin, JJ
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 15-十一月-2004
摘要: We have systematically measured the electrical resistivities and thermopowers of transparent tin-doped indium oxide films. We found that the resistivities obey the Bloch-Gruneisen law between 25 and 300 K, whereas below 25 K, the resistivities slightly increase logarithmically with the decreasing temperature due to the weak-localization and electron-electron interaction effects. The thermopowers are negative and decrease linearly with temperature from 300 K down to 1.8 K. Our results strongly indicate that the tin-doped indium oxide films behave as a good, free-electron-like conductor while being transparent. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1801153
http://hdl.handle.net/11536/25635
ISSN: 0021-8979
DOI: 10.1063/1.1801153
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 96
Issue: 10
起始頁: 5918
結束頁: 5920
顯示於類別:期刊論文


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