標題: Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers
作者: Liu, PC
Lu, CL
Wu, YCS
Cheng, JH
Ouyang, H
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 22-十一月-2004
摘要: The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 degreesC. When temperatures increased above 400 degreesC, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 degreesC. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1823592
http://hdl.handle.net/11536/25629
ISSN: 0003-6951
DOI: 10.1063/1.1823592
期刊: APPLIED PHYSICS LETTERS
Volume: 85
Issue: 21
起始頁: 4831
結束頁: 4833
顯示於類別:期刊論文


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  1. 000225300600001.pdf