Title: Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
Authors: Wu, JW
You, JW
Ma, HC
Cheng, CC
Chang, CS
Huang, GW
Wang, T
Department of Electronics Engineering and Institute of Electronics
Issue Date: 22-Nov-2004
Abstract: Low frequency flicker noise in n-type metal-oxide-semiconductor field effect transistors (n-MOSFETs) with 15 Angstrom gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1827930
ISSN: 0003-6951
DOI: 10.1063/1.1827930
Volume: 85
Issue: 21
Begin Page: 5076
End Page: 5077
Appears in Collections:Articles

Files in This Item:

  1. 000225300600083.pdf