標題: Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
作者: Wu, JW
You, JW
Ma, HC
Cheng, CC
Chang, CS
Huang, GW
Wang, T
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 22-十一月-2004
摘要: Low frequency flicker noise in n-type metal-oxide-semiconductor field effect transistors (n-MOSFETs) with 15 Angstrom gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1827930
http://hdl.handle.net/11536/25625
ISSN: 0003-6951
DOI: 10.1063/1.1827930
期刊: APPLIED PHYSICS LETTERS
Volume: 85
Issue: 21
起始頁: 5076
結束頁: 5077
顯示於類別:期刊論文


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