標題: HfO2 MIS capacitor with copper gate electrode
作者: Perng, TH
Chien, CH
Chen, CW
Yang, MJ
Lehnen, P
Chang, CY
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: bias-temperature stress;copper-gate (Cu-gate) electrode;hafnium dioxide (HfO)
公開日期: 1-Dec-2004
摘要: Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown (QBD) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO2 dielectric, Cu in contact with HfO2 seems to be very stable. The HfO2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO2 with its considerably high density of 9.68 g/cm(3) is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.
URI: http://dx.doi.org/10.1109/LED.2004.839221
http://hdl.handle.net/11536/25592
ISSN: 0741-3106
DOI: 10.1109/LED.2004.839221
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 25
Issue: 12
起始頁: 784
結束頁: 786
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