Title: Growth of ZnO nanowires without catalyst on porous silicon
Authors: Chang, CC
Chang, CS
光電工程學系
Department of Photonics
Keywords: ZnO;nanowire;porous silicon;grazing-angle XRD;TEM;EDX;PL
Issue Date: 1-Dec-2004
Abstract: Porous silicon (PS) technology is, for the first time, used to grow ZnO nanowires on the surface of a PS substrate with a rough morphology without any catalyst. The characteristics of these nanowires were investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive X-ray (EDX), grazing-angle X-ray diffraction (XRD) and photoluminescence (PL) measurements. Zn vapor condenses easily on the PS surface and forms a wetting layer, but not on the flat Si surface. The PS surface provides a rough surface morphology to form a wetting layer by decreasing the surface energy so that ZnO nanowires can grow without any catalyst. The Zn-rich composition changed during growth; the ratio of zinc to oxygen was near to one at the top part of the nanowires. The probable growth mechanism was the vapor-solid (VS) process. In principle, the selective growth of ZnO nanowires on Si-base devices for optoelectronic application is possible.
URI: http://dx.doi.org/10.1143/JJAP.43.8360
http://hdl.handle.net/11536/25583
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.8360
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 12
Begin Page: 8360
End Page: 8364
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