標題: Growth of ZnO nanowires without catalyst on porous silicon
作者: Chang, CC
Chang, CS
光電工程學系
Department of Photonics
關鍵字: ZnO;nanowire;porous silicon;grazing-angle XRD;TEM;EDX;PL
公開日期: 1-十二月-2004
摘要: Porous silicon (PS) technology is, for the first time, used to grow ZnO nanowires on the surface of a PS substrate with a rough morphology without any catalyst. The characteristics of these nanowires were investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive X-ray (EDX), grazing-angle X-ray diffraction (XRD) and photoluminescence (PL) measurements. Zn vapor condenses easily on the PS surface and forms a wetting layer, but not on the flat Si surface. The PS surface provides a rough surface morphology to form a wetting layer by decreasing the surface energy so that ZnO nanowires can grow without any catalyst. The Zn-rich composition changed during growth; the ratio of zinc to oxygen was near to one at the top part of the nanowires. The probable growth mechanism was the vapor-solid (VS) process. In principle, the selective growth of ZnO nanowires on Si-base devices for optoelectronic application is possible.
URI: http://dx.doi.org/10.1143/JJAP.43.8360
http://hdl.handle.net/11536/25583
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.8360
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 12
起始頁: 8360
結束頁: 8364
顯示於類別:期刊論文


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  1. 000226035000090.pdf