標題: Electroless copper/nickel films deposited on AIN substrates
作者: Liang, MW
Hsieh, TE
Chen, CC
Hung, YT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: electroless copper/nickel;aluminum nitride;surface roughness;diffusion barrier;flip chip
公開日期: 1-Dec-2004
摘要: In this work, we studied the application of electroless copper/nickel (Cu/Ni) films deposited on aluminum nitride (AlN) substrates to high-frequency power GaAs device packaging. Experimental results showed metal films deposited on polished AlN surfaces possess a flatter surface, a finer grain structure, and a lower resistivity than those on unpolished surfaces. On unpolished AlN substrates, rough-surface-induced voids appear in the film interface during grain clustering, therefore deteriorating the electrical conductivity of the deposited layers. Pull-off tests revealed that the Cu/Ni films strongly adhered on both types of AlN substrates and that the adhesion strength exceeded 761 kg/cm(2). The Ni film remained a mixture of amorphous and microcrystalline structures, and the Cu film was polycrystalline. The resistivity of the Cu/Ni film was decreased by annealing process, which in turn decreased the number of crystal defects in the films. Subsequent Pb-Sn solder bumping experiments indicated the amorphous Ni(P) film was a good diffusion barrier layer since Sn could not diffuse through it.
URI: http://dx.doi.org/10.1143/JJAP.43.8258
http://hdl.handle.net/11536/25581
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.8258
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 12
起始頁: 8258
結束頁: 8266
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