標題: CoTiO3 high-kappa, dielectrics on HSG for DRAM applications
作者: Chao, TS
Ku, WM
Lin, HC
Landheer, D
Wang, YY
Mori, Y
奈米中心
Nano Facility Center
關鍵字: dynamic random access memories (DRAM);high-kappa;nitride
公開日期: 1-十二月-2004
摘要: In this paper, a new high-kappa dielectric CoTiO3 has been investigated for the first time on hemispherical grained (HSG) poly-Si dynamic random access memories capacitors. Three types of HSG were prepared. We found that capacitors with maximum grain size and the highest density exhibit twice the capacitance of the others. The dielectric constant for CoTiO3 was estimated to be larger than 50. Leakage current measurements performed at temperatures as high as 100degreesC show that this dielectric is stable. The polarity dependence is found to be due to the different barrier heights with the nitride barrier. A leakage mechanism is proposed for this polarity dependence.
URI: http://dx.doi.org/10.1109/TED.2004.839880
http://hdl.handle.net/11536/25573
ISSN: 0018-9383
DOI: 10.1109/TED.2004.839880
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 12
起始頁: 2200
結束頁: 2204
顯示於類別:期刊論文


文件中的檔案:

  1. 000225362900035.pdf