標題: Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
作者: Chang, TC
Tsai, TM
Liu, PT
Chen, CW
Tseng, TY
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: porous organosilicate;low-K;E-beam;direct patterning
公開日期: 22-Dec-2004
摘要: The effect of electron beam (e-beam) curing on an ultra low dielectric constant material, porous organosilicate glass (OSG) is investigated. In conventional IC integration processes, photoresist (P. R.) stripping with O-2 plasma and wet chemical stripper is an inevitable step. However, dielectric degradation often occurs when low-k dielectrics undergo the PR stripping processing. This limits the application of incorporating low-k material into semiconductor fabrication. In order to overcome the integration issue, e-beam direct curing process was proposed in this study. In this technology, the dielectric regions irradiated by e-beam will be cross-linked, forming the desired patterns. Meanwhile, the regions without e-beam illumination are dissolvable in a mingled solvent of 2.38 wt.% tetra-methyl ammonium hydroxide (TMAH) and methanol with the ratio of 1:8. In this work, the possible doses of e-beam exposed porous OSG are decided by Fourier transform infrared spectroscopy, n&k 1200 analyzer and electrical analyses. The experimental results expressed that the minimum dosage to cure porous OSG film is 6 muC/cm(2), which is similar to commercial e-beam resist. Additionally, a scanning electron microscope +/-S.E.M.) image of homemade pattern was made to estimate the process practicability. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2004.08.178
http://hdl.handle.net/11536/25542
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2004.08.178
期刊: THIN SOLID FILMS
Volume: 469
Issue: 
起始頁: 383
結束頁: 387
Appears in Collections:Conferences Paper


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