標題: Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
作者: Cheng, YL
Wang, Y
Lan, JK
Chen, HC
Lin, JH
Wu, Y
Liu, PT
Wu, Y
Feng, MS
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
關鍵字: low-k;carrier gas;plasma-enhanced chemical vapor deposition
公開日期: 22-Dec-2004
摘要: For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and the carrier gas. In this work, we present the effects of the carrier gas on the characterizations of the low-k films, including reaction mechanism, the deposition rate, and the mechanical and electrical properties. According to the experimental results, the low-k film in Ar carrier gas exhibits the improvement in deposition rate, nonuniformity, leakage current, and hardness. In addition, the dielectric constant of the deposited low-k film is slightly sacrificed due to the decrease of micropores in the deposited films. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2004.08.159
http://hdl.handle.net/11536/25539
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2004.08.159
期刊: THIN SOLID FILMS
Volume: 469
Issue: 
起始頁: 178
結束頁: 183
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000225724300032.pdf