標題: EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
作者: CHYAN, YF
SZE, SM
CHANG, CY
REIF, R
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: HETEROJUNCTION BIPOLAR TRANSISTOR;HIGH-LEVEL INJECTION;CUTOFF FREQUENCY;MAXIMUM OSCILLATION FREQUENCY;SWITCHING DELAY TIME
公開日期: 1-Apr-1994
摘要: We report the theoretical investigation of the effect of Ge concentration on both static and high-frequency performances in polycrystalline silicon emitter GexSi1-x heterojunction bipolar transistors (HBTs). The calculation is carried out up to 0.95 V, before the onset of the Kirk effect [C. T. Kirk: IEEE Trans. Electron Devices ED-9 (1962) 164]. From this model, we find that the current gain, transconductance, cutoff frequency, and maximum oscillation frequency increase with increasing Ge concentration. In addition, the base transit time and the switching delay time in the emitter-coupled logic circuit slightly decrease as Ge content increases. Furthermore, it shows that the high-level injection eff ect becomes more pronounced in the GexSi1-x HBT as Ge concentration increases. Compared with the conventional low-level injection model, the improved model provides much more accurate expressions for electrical characteristics of GexSi1-x HBTs operating under high-level injection.
URI: http://dx.doi.org/10.1143/JJAP.33.1803
http://hdl.handle.net/11536/2548
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.1803
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 4A
起始頁: 1803
結束頁: 1808
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