標題: Improvement of junction leakage by using a Zr cap layer on a 30 nm ultrashallow nickel-silicide junction
作者: Lee, TL
Lee, MZ
Lei, TF
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: This paper investigates the effects of Zr capping on nickel silicided n(+)/p shallow junctions. Although nickel silicide possesses many benefits compared with titanium and cobalt silicide, some potential problems still need to be addressed for ultrashallow junction applications. In this work, a Zr protective cap is used to preserve the silicide from oxygen contamination and to suppress the increase of junction leakage during the silicidation process. Due to the suppressed leakage current and the appropriate series resistence, formation of a 30 nm ultrashallow junction can be accomplished. (C) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25435
http://dx.doi.org/10.1149/1.1851052
ISSN: 0013-4651
DOI: 10.1149/1.1851052
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 152
Issue: 2
起始頁: G158
結束頁: G162
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