標題: Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
作者: Kao, CC
Kuo, HC
Huang, HW
Chu, JT
Peng, YC
Hsieh, YL
Luo, CY
Wang, SC
Yu, CC
Lin, CF
光電工程學系
Department of Photonics
關鍵字: etching profile;GaN;light-emitting diode (LED);light extraction efficiency
公開日期: 1-Jan-2005
摘要: We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
URI: http://dx.doi.org/10.1109/LPT.2004.837480
http://hdl.handle.net/11536/25427
ISSN: 1041-1135
DOI: 10.1109/LPT.2004.837480
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 17
Issue: 1
起始頁: 19
結束頁: 21
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