標題: Achieving a Good Life Time in a Vertical-Organic-Diode Gas Sensor
作者: Dai, Ming-Zhi
Chen, Yen-Ho
Chuang, Ming-Yen
Zan, Hsiao-Wen
Meng, Hsin-Fei
物理研究所
光電工程學系
光電工程研究所
Institute of Physics
Department of Photonics
Institute of EO Enginerring
關鍵字: ammonia;gas sensor;polythiophene;solid-state sensors
公開日期: 1-Sep-2014
摘要: In this study, we investigate the keys to obtain a sensitive ammonia sensor with high air stability by using a low-cost polythiophene diode with a vertical channel and a porous top electrode. Poly(3-hexylthiophene) (P3HT) and air-stable poly(5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene) (PQT-12) are both evaluated as the active sensing layer. Two-dimensional current simulation reveals that the proposed device exhibits numerous connected vertical nanometer junctions (VNJ). Due to the de-doping reaction between ammonia molecules and the bulk current flowing through the vertical channel, both PQT-12 and P3HT VNJ-diodes exhibit detection limits of 50-ppb ammonia. The P3HT VNJ-diode, however, becomes unstable after being stored in air for two days. On the contrary, the PQT-12 VNJ-diode keeps an almost unchanged response to 50-ppb ammonia after being stored in air for 25 days. The improved storage lifetime of an organic-semiconductor-based gas sensor in air is successfully demonstrated.
URI: http://dx.doi.org/10.3390/s140916287
http://hdl.handle.net/11536/25381
ISSN: 1424-8220
DOI: 10.3390/s140916287
期刊: SENSORS
Volume: 14
Issue: 9
起始頁: 16287
結束頁: 16295
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