|標題:||Investigation of Random Telegraph Noise Amplitudes in Hafnium Oxide Resistive Memory Devices|
|作者:||Chung, Y. T.|
Liu, Y. H.
Su, P. C.
Cheng, Y. H.
Chen, M. C.
Department of Electronics Engineering and Institute of Electronics
|摘要:||Statistical characterization of two-level random telegraph noise (RTN) amplitude distribution in a hafnium oxide resistive memory has been performed. We find that two-level RTN in HRS exhibits a large amplitude distribution tail, as compared to LRS. To investigate an RTN trap position in a hafnium oxide film, we measure the dependence of electron capture and emission times of RTN on applied read voltage. A correlation between an RTN trap position and RTN amplitude is found. A quasi-two-dimensional RTN amplitude simulation based on trap-assisted electron sequential tunneling is developed. Our study shows that RTN traps in a rupture region of a hafnium oxide film are responsible for an RTN large-amplitude tail in HRS mostly.|
|期刊:||2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM|
|Appears in Collections:||Conferences Paper|