標題: Double-graded bandgap in Cu(In,Ga)Se-2 thin film solar cells by low toxicity selenization process
作者: Wang, Yi-Chih
Shieh, Han-Ping D.
交大名義發表
光電工程學系
顯示科技研究所
National Chiao Tung University
Department of Photonics
Institute of Display
公開日期: 18-Aug-2014
摘要: A low-toxic selenization with post gallium diffusion (PGD) treatment has been demonstrated to increase the bandgap in the surface Cu(In,Ga)Se-2 (CIGSe) absorbers and to form double-graded bandgap profiles to improve the cell efficiency. The CIGSe absorber with PGD for 5 min increased open-circuit voltage from 0.49 to 0.66V and efficiency from 9.2% to 13.2%, contributed by the enhancement of carrier recombination in the space-charge region. The reduction in short-circuit current from 30.8 to 29.9 mA/cm(2), attributed to the absorption loss in long-wavelength regions, can be potentially improved by further optimization of the minimum bandgap value in gradient valley. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4893713
http://hdl.handle.net/11536/25221
ISSN: 0003-6951
DOI: 10.1063/1.4893713
期刊: APPLIED PHYSICS LETTERS
Volume: 105
Issue: 7
結束頁: 
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