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dc.contributor.authorLin, Meng-Yuen_US
dc.contributor.authorChang, Chung-Enen_US
dc.contributor.authorWang, Cheng-Hungen_US
dc.contributor.authorSu, Chen-Fungen_US
dc.contributor.authorChen, Chien_US
dc.contributor.authorLee, Si-Chenen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.date.accessioned2014-12-08T15:36:49Z-
dc.date.available2014-12-08T15:36:49Z-
dc.date.issued2014-08-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4893448en_US
dc.identifier.urihttp://hdl.handle.net/11536/25220-
dc.description.abstractUniform large-size MoS2/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS2/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS2/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS2/graphene are achieved by CVD fabrication of graphene layers on top of the MoS2, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleToward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4893448en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume105en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000341189800092-
dc.citation.woscount1-
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