標題: An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
作者: Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
Chiou, Shan-Haw
Huang, Chiung-Hui
Chiu, Yu-Chien
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gettering;InGaZnO (IGZO);thin-film transistor (TFT);titanium oxide (TiOx)
公開日期: 1-Sep-2014
摘要: This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.
URI: http://dx.doi.org/10.1109/TNANO.2014.2332395
http://hdl.handle.net/11536/25197
ISSN: 1536-125X
DOI: 10.1109/TNANO.2014.2332395
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 13
Issue: 5
起始頁: 933
結束頁: 938
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