標題: Spectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stacking
作者: Chiu, Ming-Hui
Li, Ming-Yang
Zhang, Wengjing
Hsu, Wei-Ting
Chang, Wen-Hao
Terrones, Mauricio
Terrones, Humberto
Li, Lain-Jong
交大名義發表
電子物理學系
National Chiao Tung University
Department of Electrophysics
關鍵字: transition metal dichalcogenides;tungsten diselenides;molybdenum disulfide;van der Wall stacking;heterojunction;interlayer coupling
公開日期: 1-Sep-2014
摘要: Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E \'\' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.
URI: http://dx.doi.org/10.1021/nn504229z
http://hdl.handle.net/11536/25193
ISSN: 1936-0851
DOI: 10.1021/nn504229z
期刊: ACS NANO
Volume: 8
Issue: 9
起始頁: 9649
結束頁: 9656
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