標題: Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory
作者: Huang, Yu-Ling
Huang, Chun-Wei
Chen, Jui-Yuan
Ting, Yi-Hsin
Lu, Kuo-Chang
Chueh, Yu-Lun
Wu, Wen-Wei
交大名義發表
材料科學與工程學系
National Chiao Tung University
Department of Materials Science and Engineering
關鍵字: phase change;PCRAM;nanodevices;in situ TEM;nonvolatile memory;In2Se3
公開日期: 1-Sep-2014
摘要: Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.
URI: http://dx.doi.org/10.1021/nn503576x
http://hdl.handle.net/11536/25192
ISSN: 1936-0851
DOI: 10.1021/nn503576x
期刊: ACS NANO
Volume: 8
Issue: 9
起始頁: 9457
結束頁: 9462
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