標題: TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURES
作者: CHYAN, YF
SZE, SM
CHANG, CY
LIAO, K
REIF, R
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: EINSTEIN RELATION;DEGENERATE;BAND STRUCTURE;KINK;THERMAL ENERGY
公開日期: 1-五月-1994
摘要: We present a systematic study of the temperature influence on the generalized Einstein relation for degenerate semiconductors with different band structures. The conventional Einstein relation is still a good approximation at very high temperatures for most carrier concentrations but becomes invalid at low temperatures for highly degenerate semiconductors. As the temperature rises, higher energy bands with small minimum energy separations (e.g., from GAMMA band to L band) and large density-of-state effective masses will have a larger fraction of carriers, because the minimum energy separations become comparable to the thermal energy. Thus, from 500 K to 1200 K, in n-type GaAs and n-type Ge, we observe kinks in the D/mu versus carrier concentration curves. However, no such kinks are observed in n-type Si due to its large minimum energy separations. Similarly, p-type Ge and p-type GaAs show no kinks, because the energy of the spin-orbit splitting in these semiconductors is large compared to the thermal energy.
URI: http://dx.doi.org/10.1143/JJAP.33.2619
http://hdl.handle.net/11536/2518
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.2619
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 5A
起始頁: 2619
結束頁: 2625
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NU12600035.pdf