標題: Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
作者: Lee, Chia-Yu
Tzou, An-Jye
Lin, Bing-Cheng
Lan, Yu-Pin
Chiu, Ching-Hsueh
Chi, Gou-Chung
Chen, Chi-Hsiang
Kuo, Hao-Chung
Lin, Ray-Ming
Chang, Chun-Yen
交大名義發表
電子物理學系
光電工程學系
友訊交大聯合研發中心
National Chiao Tung University
Department of Electrophysics
Department of Photonics
D Link NCTU Joint Res Ctr
關鍵字: GaN;Flip chip ultraviolet light-emitting diodes (FC UV-LEDs);Nucleation;Reactive plasma deposited AlN
公開日期: 16-Sep-2014
摘要: The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 x 10(7) cm(-2) to 2.6 x 10(7) cm(-2). Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.
URI: http://dx.doi.org/10.1186/1556-276X-9-505
http://hdl.handle.net/11536/25177
ISSN: 1556-276X
DOI: 10.1186/1556-276X-9-505
期刊: NANOSCALE RESEARCH LETTERS
Volume: 9
Issue: 
結束頁: 
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