標題: NEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENT
作者: LIN, JK
CHANG, CY
HUANG, HS
CHEN, KL
KUO, DC
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: SONOS;EEPROM;MNOS;OFF-CELL;LEAKAGE CURRENT
公開日期: 1-五月-1994
摘要: A new polysilicon-oxide-nitride-oxide-silicon (SONOS) electrically erasable programmable read-only memory (EEPROM) device, which eliminated off-cell leakage current, has been described and fabricated. The leakage current is easily encountered in metal-nitride-oxide-silicon (MNOS)-type EEPROMs. Two parasitic transistors, which are in parallel with the desired variable V(t) cell, are responsible for the leakage current. We demonstrated that the parasitic transistors are caused either by the nearly constant-threshold-voltage parasitic transistors surrounding the active region or by the ''fringing effect'' in poly-Si gate edges. The on-state and off-state I-V curves of the cell are shown and compared with those of two other different devices. The results reveal that the off-cell leakage current, which is observed in the other two devices, is completely eliminated in the proposed cell.
URI: http://dx.doi.org/10.1143/JJAP.33.2513
http://hdl.handle.net/11536/2517
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.2513
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 5A
起始頁: 2513
結束頁: 2514
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NU12600017.pdf