Title: EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
Authors: CHYAN, YF
SZE, SM
CHANG, CY
REIF, R
電控工程研究所
Institute of Electrical and Control Engineering
Keywords: INTERFACIAL OXIDE;HIGH-FREQUENCY;POLYEMITTER;HIGH-LEVEL INJECTION;CURRENT GAIN;FORWARD TRANSIT TIME;RECOMBINATION VELOCITY;INTRINSIC BASE RESISTANCE
Issue Date: 1-May-1994
Abstract: We report on a theoretical investigation of the eff ect of interfacial oxide on both static and dynamic performance in polycrystalline silicon emitter bipolar transistors. The calculation is carried out up to 0.9 V, before the onset of the Kirk eff ect. From the model, it is found that the current gain increases and the forward transit time decreases as interfacial oxide thickness increases. Furthermore, both the current gain and the forward transit time decrease as recombination velocity increases. In addition, the intrinsic base resistance remains almost constant as interfacial oxide thickness increases, and increases as recombination velocity increases. Compared with the conventional low-level injection model, the improved model provides much more accurate expressions for electrical characteristics of bipolar transistors operating under high-level injection.
URI: http://dx.doi.org/10.1143/JJAP.33.2487
http://hdl.handle.net/11536/2516
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.2487
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 5A
Begin Page: 2487
End Page: 2493
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  1. A1994NU12600011.pdf