標題: NEW OBSERVATION AND THE MODELING OF GATE AND DRAIN CURRENTS IN OFF-STATE P-MOSFETS
作者: CHEN, MJ
CHAO, KC
CHEN, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1994
摘要: The work reports new observations concerning the gate and drain currents measured at off-state conditions in buried-type p-channel LDD MOSFET devices. Detailed investigation of the observed phenomena reveals that 1) the drain current can be separated into two distinct components: band-to-band tunneling in the gate-to-drain overlap region and collection of holes generated via impact ionization by electrons inside the oxide; and 2) the gate current can be separated into two distinct components: the hot electron injection into the oxide and the Fowler-Nordheim electron tunneling through the oxide. At low negative drain voltage, the dominant component of the drain current is the hole generation inside the oxide. At high negative drain voltage, the drain current is essentially due to band-to-band tunneling, and it is correlated with the hot-electron injection-induced gate current.
URI: http://dx.doi.org/10.1109/16.285025
http://hdl.handle.net/11536/2515
ISSN: 0018-9383
DOI: 10.1109/16.285025
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 41
Issue: 5
起始頁: 734
結束頁: 739
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NN18500018.pdf