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dc.contributor.authorPhuoc Huu Leen_US
dc.contributor.authorLiao, Chien-Nengen_US
dc.contributor.authorLuo, Chih Weien_US
dc.contributor.authorLeu, Jihperngen_US
dc.date.accessioned2014-12-08T15:36:46Z-
dc.date.available2014-12-08T15:36:46Z-
dc.date.issued2014-12-05en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2014.07.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/25145-
dc.description.abstractNanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si (100) substrates at argon ambient pressure (P-Ar) of 80 Pa by pulsed laser deposition (PLD). The effects of film morphologies, structures, and compositions on the thermoelectric properties were investigated. At a substrate temperature (T-s) of 220-340 degrees C, stoichiometric films with highly (001)-oriented and layered structures showed the best properties, with a carrier mobility mu of 83.9-122.3 cm(2)/Vs, an absolute Seebeck coefficient vertical bar alpha vertical bar of 172.8-189.7 mu V/K, and a remarkably high power factor (PF) of 18.2-24.3 mu W cm(-1) K-2. By contrast, the Te-rich films deposited at T-s <= 120 degrees C with (015)-preferred orientations and columnar-small grain structures or the Te-deficient film deposited at 380 degrees C with Bi4Te5 polyhedron structure possessed poor properties, with mu < 10.0 cm(2)/Vs, vertical bar alpha vertical bar < 54 mu V/K, and PFs <= 0.44 mu W cm(-1) K-2. The morphology of highly (001) oriented-layered structures and the stoichiometry predominantly contribute to the substantial enhancement of mu and alpha vertical bar, respectively, resulting in remarkable enhancement in PF. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBi2Te3en_US
dc.subjectThermoelectric propertiesen_US
dc.subjectNanostructuresen_US
dc.subjectPulsed laser deposition (PLD)en_US
dc.titleThermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed laser depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2014.07.018en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume615en_US
dc.citation.issueen_US
dc.citation.spage546en_US
dc.citation.epage552en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000342245700085-
dc.citation.woscount0-
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