標題: Thermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed laser deposition
作者: Phuoc Huu Le
Liao, Chien-Neng
Luo, Chih Wei
Leu, Jihperng
交大名義發表
材料科學與工程學系
電子物理學系
National Chiao Tung University
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: Bi2Te3;Thermoelectric properties;Nanostructures;Pulsed laser deposition (PLD)
公開日期: 5-Dec-2014
摘要: Nanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si (100) substrates at argon ambient pressure (P-Ar) of 80 Pa by pulsed laser deposition (PLD). The effects of film morphologies, structures, and compositions on the thermoelectric properties were investigated. At a substrate temperature (T-s) of 220-340 degrees C, stoichiometric films with highly (001)-oriented and layered structures showed the best properties, with a carrier mobility mu of 83.9-122.3 cm(2)/Vs, an absolute Seebeck coefficient vertical bar alpha vertical bar of 172.8-189.7 mu V/K, and a remarkably high power factor (PF) of 18.2-24.3 mu W cm(-1) K-2. By contrast, the Te-rich films deposited at T-s <= 120 degrees C with (015)-preferred orientations and columnar-small grain structures or the Te-deficient film deposited at 380 degrees C with Bi4Te5 polyhedron structure possessed poor properties, with mu < 10.0 cm(2)/Vs, vertical bar alpha vertical bar < 54 mu V/K, and PFs <= 0.44 mu W cm(-1) K-2. The morphology of highly (001) oriented-layered structures and the stoichiometry predominantly contribute to the substantial enhancement of mu and alpha vertical bar, respectively, resulting in remarkable enhancement in PF. (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2014.07.018
http://hdl.handle.net/11536/25145
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2014.07.018
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 615
Issue: 
起始頁: 546
結束頁: 552
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