標題: Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
作者: Luc, Quang-Ho
Chang, Edward Yi
Trinh, Hai-Dang
Wong, Yuen-Yee
Do, Huy-Binh
Lin, Yueh-Chin
Wang, Sheng-Ping
Yang, Min-Chieh
Wu, Hsing-Chen
Chen, Ke-Hung
Liao, Yi-Hsien
Tu, Sheng-Hung
材料科學與工程學系
電機工程學系
Department of Materials Science and Engineering
Department of Electrical and Computer Engineering
公開日期: 2014
摘要: In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation. (C) 2014 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/25112
http://dx.doi.org/10.1149/2.0011410ssl
ISSN: 2162-8742
DOI: 10.1149/2.0011410ssl
期刊: ECS SOLID STATE LETTERS
Volume: 3
Issue: 9
起始頁: N27
結束頁: N31
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