標題: Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductors
作者: Liu, DG
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: delta-doping;quantum wells;self-consistent calculation;doping concentration;C-V characteristics
公開日期: 15-十月-1997
摘要: In this paper, a self-consistent model to simulate the general characteristics of one-dimensional semiconductor structures is demonstrated. During calculation, possible quantum effects and the distributions of both electrons and holes are all considered. In this model, a continuity equation is solved to calculate the distribution of free electrons and holes, The possible quantum wells are sought using the Schrodinger equation. The overall charge density and potential are obtained self-consistently by an iteration scheme. The C-V characteristics of the delta-doped structures are simulated and then compared with those of practical samples. By comparing with these delta-doped samples, the effective numbers of dopant atoms can be precisely determined. For these highly doped samples, it is found that the activation rates are only about half. This finding can be verified by Hall measurements which confirms the accuracy in this study. (C) 1997 Elsevier Science S.A.
URI: http://hdl.handle.net/11536/251
ISSN: 0254-0584
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 50
Issue: 3
起始頁: 200
結束頁: 204
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XZ78800004.pdf