標題: IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION
作者: CHERN, HN
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1994
摘要: The effect of fluorine on the polysilicon oxide (polyoxide) characteristics is investigated. It is found that the polyoxide leakage current and breakdown strength are improved as fluorine is incorporated into the oxide film. Experimental results show that the improvement is believed to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture.
URI: http://dx.doi.org/10.1109/55.291593
http://hdl.handle.net/11536/2509
ISSN: 0741-3106
DOI: 10.1109/55.291593
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 15
Issue: 5
起始頁: 181
結束頁: 182
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NP23600013.pdf