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dc.contributor.authorCheng, Ya-Chien_US
dc.contributor.authorChen, Hung-Binen_US
dc.contributor.authorHan, Ming-Hungen_US
dc.contributor.authorLu, Nan-Hengen_US
dc.contributor.authorSu, Jun-Jien_US
dc.contributor.authorShao, Chi-Shenen_US
dc.contributor.authorWu, Yung-Chunen_US
dc.date.accessioned2014-12-08T15:36:43Z-
dc.date.available2014-12-08T15:36:43Z-
dc.date.issued2014-08-13en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/1556-276X-9-392en_US
dc.identifier.urihttp://hdl.handle.net/11536/25070-
dc.description.abstractThe high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of I-off than that in JL planar TFTs. The measured partial derivative V-th/partial derivative T of -1.34 mV/degrees C in JL GAA nanosheet TFTs has smaller temperature dependence than that of -5.01 mV/degrees C in JL planar TFTs.en_US
dc.language.isoen_USen_US
dc.subjectJunctionlessen_US
dc.subjectNanowireen_US
dc.subjectThin film transistor (TFTs)en_US
dc.subjectGate all around (GAA)en_US
dc.subjectQuantum confinement effecten_US
dc.titleTemperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1186/1556-276X-9-392en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume9en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000340939300001-
dc.citation.woscount0-
Appears in Collections:Articles