標題: Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
作者: Cheng, Ya-Chi
Chen, Hung-Bin
Han, Ming-Hung
Lu, Nan-Heng
Su, Jun-Ji
Shao, Chi-Shen
Wu, Yung-Chun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Junctionless;Nanowire;Thin film transistor (TFTs);Gate all around (GAA);Quantum confinement effect
公開日期: 13-Aug-2014
摘要: The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of I-off than that in JL planar TFTs. The measured partial derivative V-th/partial derivative T of -1.34 mV/degrees C in JL GAA nanosheet TFTs has smaller temperature dependence than that of -5.01 mV/degrees C in JL planar TFTs.
URI: http://dx.doi.org/10.1186/1556-276X-9-392
http://hdl.handle.net/11536/25070
ISSN: 1556-276X
DOI: 10.1186/1556-276X-9-392
期刊: NANOSCALE RESEARCH LETTERS
Volume: 9
Issue: 
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000340939300001.pdf