標題: Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes
作者: Chang, Yi-An
Chen, Fang-Ming
Tsai, Yu-Lin
Chang, Ching-Wen
Chen, Kuo-Ju
Li, Shan-Rong
Lu, Tien-Chang
Kuo, Hao-Chung
Kuo, Yen-Kuang
Yu, Peichen
Lin, Chien-Chung
Tu, Li-Wei
光電系統研究所
光電工程學系
Institute of Photonic System
Department of Photonics
公開日期: 25-Aug-2014
摘要: In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (V-oc) from 1.88 to 1.94 V and short-circuit current density (J(sc)) from 0.84 to 1.02 mA/cm(2) are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical front-side illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the J(sc) could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors. (C) 2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.22.0A1334
http://hdl.handle.net/11536/25056
ISSN: 1094-4087
DOI: 10.1364/OE.22.0A1334
期刊: OPTICS EXPRESS
Volume: 22
Issue: 17
起始頁: A1334
結束頁: A1342
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