標題: SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENT
作者: UENG, SY
CHAO, TS
WANG, PJ
CHEN, WH
CHANG, DC
CHENG, HC
奈米中心
Nano Facility Center
公開日期: 1-五月-1994
摘要: Thin oxides thermally grown on reactive-ion-etched silicon surfaces in N2O ambient have been studied. As compared with pure oxides grown on the etched silicon in dry oxygen, N2O-grown oxides exhibit significantly stronger immunity to the RIE-induced damages. A great improvement in both time-zero-dielectric-breakdown (TZDB) and time-dependent-breakdown (TDDB) characteristics is observed for the N2O-grown oxides on RIE-treated silicon surfaces. Accelerated tests have shown that the N2O oxide grown on the RIE silicon surface can achieve a lifetime longer than the pure oxide grown on the correspondingly etched silicon surface with a factor over 10(8).
URI: http://dx.doi.org/10.1109/16.285043
http://hdl.handle.net/11536/2502
ISSN: 0018-9383
DOI: 10.1109/16.285043
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 41
Issue: 5
起始頁: 850
結束頁: 851
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NN18500035.pdf