標題: THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
作者: CHERN, HN
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-1994
摘要: The fluorine implantation on polysilicon was found to improve the characteristics of polysilicon thin-film transistors (TFT's). The fluorine passivates the trap states within the polysilicon channel. As compared with the H-2-plasma passivation, the fluorine implantation passivates more uniformly both the band tail-states and midgap deep-state, while the H-2-plasma treatment is more effective to passivate deep states than tail states. A fluorine-implanted device can be further improved its performance if an H-2-plasma treatment is applied. In contrast to the H-2-plasma passivation, the fluorine passivation improves the device hot-carrier immunity. Combining the fluorine passivation and H-2-plasma passivation, a high performance TFT with a high hot-carrier immunity can be obtained.
URI: http://dx.doi.org/10.1109/16.285019
http://hdl.handle.net/11536/2501
ISSN: 0018-9383
DOI: 10.1109/16.285019
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 41
Issue: 5
起始頁: 698
結束頁: 702
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  1. A1994NN18500012.pdf