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dc.contributor.authorTsai, Hung-Weien_US
dc.contributor.authorWang, Tsang-Hsiuen_US
dc.contributor.authorChan, Tsung-Chengen_US
dc.contributor.authorChen, Pei-Juen_US
dc.contributor.authorChung, Chih-Chunen_US
dc.contributor.authorYaghoubi, Alirezaen_US
dc.contributor.authorLiao, Chien-Nengen_US
dc.contributor.authorDiau, Eric Wei-Guangen_US
dc.contributor.authorChueh, Yu-Lunen_US
dc.date.accessioned2014-12-08T15:36:38Z-
dc.date.available2014-12-08T15:36:38Z-
dc.date.issued2014en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/11536/24979-
dc.identifier.urihttp://dx.doi.org/10.1039/c4nr00184ben_US
dc.description.abstractNanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi2Te3)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues. In the present study, we demonstrate a one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of bulk Bi2Te3 with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 mu Omega m, respectively. The formation mechanism of NSAs has been proposed. A 1.12% efficiency of quantum dot-sensitized solar cells with Bi2Te3 NSAs for counter electrode has been demonstrated, indicating that Bi2Te3 NSAs from top-down processing with a high ratio of surface area to volume are a promising candidate for possible applications such as thermoelectrics, dye-sensitized solar cells (DSSCs), and lithium-ion batteries.en_US
dc.language.isoen_USen_US
dc.titleFabrication of large-scale single-crystal bismuth telluride (Bi2Te3) nanosheet arrays by a single-step electrolysis processen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4nr00184ben_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume6en_US
dc.citation.issue14en_US
dc.citation.spage7780en_US
dc.citation.epage7785en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000338638900007-
dc.citation.woscount0-
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