標題: Device Modeling of the Performance of Cu(In,Ga)Se-2 Solar Cells with V-Shaped Bandgap Profiles
作者: Kuo, Shou-Yi
Hsieh, Ming-Yang
Hsieh, Dan-Hua
Kuo, Hao-Chung
Chen, Chyong-Hua
Lai, Fang-I
光電工程學系
Department of Photonics
公開日期: 2014
摘要: The effect of Cu(In,Ga)Se-2 (CIGS) with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga) ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V) curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum) to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.
URI: http://hdl.handle.net/11536/24960
http://dx.doi.org/10.1155/2014/186579
ISSN: 1110-662X
DOI: 10.1155/2014/186579
期刊: INTERNATIONAL JOURNAL OF PHOTOENERGY
顯示於類別:期刊論文


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