標題: Applications of mu c-SiOx:H as integrated n-layer and back transparent conductive oxide for a-Si:H/mu c-Si:H tandem cells
作者: Liang, Shin-Wei
Huang, Yen-Tang
Hsu, Hung-Jung
Hsu, Cheng-Hang
Tsai, Chuang-Chuang
光電工程學系
Department of Photonics
公開日期: 1-五月-2014
摘要: We have prepared n-type hydrogenated microcrystalline silicon oxide [mu c-SiOx:H(n)] films with oxygen contents from 0 to 37.3 at. % by varying the CO2-to-SiH4 flow ratio in a plasma-enhanced chemical vapor deposition (PECVD) system. By using mu c-SiOx:H(n) as an effective replacement for integrated mu c-Si:H(n) and indium-tin oxide (ITO), mu c-Si:H single-junction and a-Si:H/mu c-Si:H tandem cells exhibited significantly improved efficiencies of 6.35 and 10.53%, respectively. The improvement of the single-junction and tandem cells mainly arose from the enhancement of long-wavelength optical absorption in mu c-Si:H absorbers, which was confirmed by a quantum efficiency instrument showing a markedly enhanced spectral response at wavelengths from 600 to 1100 nm. Moreover, all the PECVD processes, except the metal contact, had an advantage of in situ deposition without breaking vacuum, thereby minimizing contamination of the interface. The simplified cell fabrication can enhance the fill factor, which will benefit industrial production. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.53.05FV08
http://hdl.handle.net/11536/24942
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.05FV08
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 53
Issue: 5
結束頁: 
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