標題: Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa
作者: Lai, Ying-Yu
Chou, Yu-Hsun
Wu, Yu-Sheng
Lan, Yu-Pin
Lu, Tien-Chang
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 1-Jun-2014
摘要: In this work, we have developed a simple GaN-based microcavity (MC) with an intracavity shallow etched mesa. The textured GaN-based MC incorporated two high-reflectivity dielectric Bragg mirrors and an InGaN/GaN multiple quantum well with a shallow etched mesa as an optical confined structure. Lasing and transverse optical confinement characteristics have been verified by measuring devices with different mesa diameters. A quality factor (Q) of 2600 and a threshold energy of 30 nJ have been observed in a 10-mu m-diameter device. Such a cavity structure could be implanted into electrically pumped GaN vertical-cavity surface-emitting lasers for supporting efficient transverse confinement. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.7.062101
http://hdl.handle.net/11536/24935
ISSN: 1882-0778
DOI: 10.7567/APEX.7.062101
期刊: APPLIED PHYSICS EXPRESS
Volume: 7
Issue: 6
起始頁: 
結束頁: 
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