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dc.contributor.authorChen, Ming-Jeren_US
dc.contributor.authorChen, Chuan-Lien_US
dc.contributor.authorHsieh, Shang-Hsunen_US
dc.contributor.authorChang, Li-Mingen_US
dc.date.accessioned2014-12-08T15:36:34Z-
dc.date.available2014-12-08T15:36:34Z-
dc.date.issued2014-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2014.2325030en_US
dc.identifier.urihttp://hdl.handle.net/11536/24911-
dc.description.abstractWell-known apparent electrical silicon bandgap narrowing in a heavily doped region of a bipolar transistor is observed by means of an enhanced minority-carrier injection experiment. In the region of interest, plasmons-induced potential fluctuations are existent in nature and hence constitute the origin of apparent bandgap narrowing. In this letter, we extract the underlying potential fluctuations directly from the enhanced minority-carrier injection experiment published in the literature. The core of the extraction lies in a combination of the two existing theoretical frameworks. First, the Gaussian distribution can serve as a good approximation of potential fluctuations. Second, no change can be made in the real bandgap between fluctuating conduction-and valence-band edges. Extracted potential fluctuations come from plasmons, as verified by our published temperature dependences of plasmons limited mobility in the inversion layer of MOSFETs as well as theoretical calculation results on bulk silicon. More importantly, this letter can deliver potential applications in the modeling and simulation area of nanoscale FETs (MOSFETs, FinFETs, and so forth) and bulk semiconductors.en_US
dc.language.isoen_USen_US
dc.subjectBandgap narrowingen_US
dc.subjectbipolar transistoren_US
dc.subjectdevice physicsen_US
dc.subjectfield-effect transistors (FETs)en_US
dc.subjectfluctuationsen_US
dc.subjectlong-range Coulomb interactionsen_US
dc.subjectplasmonsen_US
dc.subjecttransporten_US
dc.titlePlasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Siliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2014.2325030en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue7en_US
dc.citation.spage708en_US
dc.citation.epage710en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000338662100007-
dc.citation.woscount1-
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