標題: Plasmons-Enhanced Minority-Carrier Injection as a Measure of Potential Fluctuations in Heavily Doped Silicon
作者: Chen, Ming-Jer
Chen, Chuan-Li
Hsieh, Shang-Hsun
Chang, Li-Ming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Bandgap narrowing;bipolar transistor;device physics;field-effect transistors (FETs);fluctuations;long-range Coulomb interactions;plasmons;transport
公開日期: 1-Jul-2014
摘要: Well-known apparent electrical silicon bandgap narrowing in a heavily doped region of a bipolar transistor is observed by means of an enhanced minority-carrier injection experiment. In the region of interest, plasmons-induced potential fluctuations are existent in nature and hence constitute the origin of apparent bandgap narrowing. In this letter, we extract the underlying potential fluctuations directly from the enhanced minority-carrier injection experiment published in the literature. The core of the extraction lies in a combination of the two existing theoretical frameworks. First, the Gaussian distribution can serve as a good approximation of potential fluctuations. Second, no change can be made in the real bandgap between fluctuating conduction-and valence-band edges. Extracted potential fluctuations come from plasmons, as verified by our published temperature dependences of plasmons limited mobility in the inversion layer of MOSFETs as well as theoretical calculation results on bulk silicon. More importantly, this letter can deliver potential applications in the modeling and simulation area of nanoscale FETs (MOSFETs, FinFETs, and so forth) and bulk semiconductors.
URI: http://dx.doi.org/10.1109/LED.2014.2325030
http://hdl.handle.net/11536/24911
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2325030
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 7
起始頁: 708
結束頁: 710
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