標題: Recombination dynamics of a localized exciton bound at basal stacking faults within the m-(p)lane ZnO film
作者: Yang, S.
Hsu, H. C.
Liu, W-R.
Lin, B. H.
Kuo, C. C.
Hsu, C-H.
Eriksson, M. O.
Holtz, P. O.
Hsieh, W. F.
光電工程學系
Department of Photonics
公開日期: 7-Jul-2014
摘要: We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4887280
http://hdl.handle.net/11536/24884
ISSN: 0003-6951
DOI: 10.1063/1.4887280
期刊: APPLIED PHYSICS LETTERS
Volume: 105
Issue: 1
結束頁: 
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