標題: Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer
作者: Lin, B. C.
Chang, Y. A.
Chen, K. J.
Chiu, C. H.
Li, Z. Y.
Lan, Y. P.
Lin, C. C.
Lee, P. T.
Kuo, Y. K.
Shih, M. H.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
光電系統研究所
光電工程學系
Institute of Photonic System
Department of Photonics
關鍵字: nitride;VCSEL;electron blocking layer
公開日期: 1-Aug-2014
摘要: In this study, the design and fabrication of a InGaN vertical-cavity surface-emitting laser (VCSEL) with a composition-graded electron blocking layer (GEBL) are revealed experimentally and theoretically. It has been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular EBL. The output power obtained at 20 kA cm(-2) is enhanced by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2 kA cm(-2) and the enlarged slope efficiency. Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple-quantum-well (MQW) active region.
URI: http://dx.doi.org/10.1088/1612-2011/11/8/085002
http://hdl.handle.net/11536/24857
ISSN: 1612-2011
DOI: 10.1088/1612-2011/11/8/085002
期刊: LASER PHYSICS LETTERS
Volume: 11
Issue: 8
結束頁: 
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