標題: Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage
作者: Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
Chiou, Ping
Chiu, Yu-Chien
Chang, Chun-Yen
Zheng, Zhi-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InGaZnO (IGZO);Thin-film transistor (TFT);Titanium oxide (TiO2)
公開日期: 1-Sep-2014
摘要: This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm(2)/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications. (C) 2014 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2014.05.010
http://hdl.handle.net/11536/24813
ISSN: 0038-1101
DOI: 10.1016/j.sse.2014.05.010
期刊: SOLID-STATE ELECTRONICS
Volume: 99
Issue: 
起始頁: 51
結束頁: 54
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