標題: UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature
作者: Yang, P. Y.
Lee, I. C.
Chang, C. T.
Lin, K. C.
Wang, J. L.
Cheng, K. J.
Lin, C. C.
Cheng, H. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85 degrees C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.
URI: http://hdl.handle.net/11536/24787
http://dx.doi.org/10.1149/1.3237015
ISBN: 978-1-60768-097-0; 978-1-56677-747-6
ISSN: 1938-5862
DOI: 10.1149/1.3237015
期刊: NANOSCALE ONE-DIMENSIONAL ELECTRONIC AND PHOTONIC DEVICES 3 (NODEPD 3)
Volume: 25
Issue: 10
起始頁: 91
結束頁: 98
Appears in Collections:Conferences Paper