|標題:||UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature|
|作者:||Yang, P. Y.|
Lee, I. C.
Chang, C. T.
Lin, K. C.
Wang, J. L.
Cheng, K. J.
Lin, C. C.
Cheng, H. C.
Department of Electronics Engineering and Institute of Electronics
|摘要:||In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85 degrees C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.|
|期刊:||NANOSCALE ONE-DIMENSIONAL ELECTRONIC AND PHOTONIC DEVICES 3 (NODEPD 3)|
|Appears in Collections:||Conferences Paper|