Title: Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
Authors: Tsai, Jung-Ruey
Lee, Ko-Hui
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Apr-2014
Abstract: A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work. The enhanced electric field around the corners of the NW channels boosts more electrons tunneling through the tunnel oxide layer during programming and erasing (P/E) processes, and thus the operation voltage markedly decreases. Furthermore, the nonlocalized trapping feature characteristic of the FG makes the injection of electrons easier during the programming operation, which was demonstrated by technology computer-aided design (TCAD) simulations. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.53.04ED14
http://hdl.handle.net/11536/24751
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.04ED14
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 53
Issue: 4
End Page: 
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