標題: Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
作者: Quang-Ho Luc
Chang, Edward Yi
Trinh, Hai-Dang
Hong-Quan Nguyen
Binh-Tinh Tran
Lin, Yueh-Chin
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2014
摘要: The influence of different annealing processes including post deposition annealing (PDA) and post metallization annealing (PMA) with various temperatures (250-400 degrees C) and ambient [N-2 and forming gas (FG)] on the electrical characteristics of Pt/Al2O3/In0.53Ga0.47As MOSCAPs are systemically studied. Comparing to samples underwent high PDA temperature, the higher leakage current has been observed for all of samples underwent high PMA temperature. This has resulted in the degradation of capacitance-voltage (C-V) behaviors. In conjunction with the current-voltage (J-V) measurement, depth profiling Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) analyses evidence that the out-diffusion of metal into oxide layer is the main source of leakage current. The noticeable passivation effect on the Al2O3/InGaAs interface has also been confirmed by the samples that underwent PDA process. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.53.04EF04
http://hdl.handle.net/11536/24749
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.04EF04
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 53
Issue: 4
結束頁: 
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