標題: High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
作者: Chang, YA
Lai, FI
Yu, HC
Kuo, HC
Laih, LW
Yu, CL
Wang, SC
光電工程學系
Department of Photonics
關鍵字: 850nm;VCSEL;leakage current;current blocking layer
公開日期: 2005
摘要: In this paper, we employed a high bandgap Al0.75Ga0.25As layer acting as an electronic blocking layer in the upper In0.15Al0.08Ga0.77As/Al0.3Ga0.7As active region before the growth of p-type layers of 850-nm vertical-cavity surface-emitting lasers (VCSELs). A threshold current of 1.33mA and slope efficiency of 0.53W/A at 25 degrees C were obtained, and the temperature dependent light output and voltage versus current (L-I-V) characteristics showed that the VCSELs with a high bandgap Al0.75Ga0.25As layer were more stable when the substrate temperature was in a range of 25-95 degrees C. The threshold current increased with temperature up to 95 degrees C was less than 21% and the slope efficiency dropped only 24.5%.
URI: http://hdl.handle.net/11536/24746
http://dx.doi.org/10.1143/JJAP.44.L901
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.L901
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 44
Issue: 28-32
起始頁: L901
結束頁: L902
顯示於類別:期刊論文


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